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STGF20NB60S
N-CHANNEL 13A - 600V TO-220FP PowerMESHTM IGBT
Table 1: General Features
TYPE STGF20NB60S VCES 600 V VCE(sat) (Max) @25C < 1.7 V IC @100C 13 A
Figure 1: Package
LOW ON-VOLTAGE DROP (Vcesat) HIGHT CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency to applications (<1kHz).
3 1 2
TO-220FP
Figure 2: Internal Schematic Diagram
APPLICATIONS LIGHT DIMMER STATIC RELAYS MOTOR CONTROL
Table 2: Order Code
PART NUMBER STGF20NB60S MARKING GF20NB60S PACKAGE TO-220FP PACKAGING TUBE
Rev. 3 August 2005 1/11
STGF20NB60S
Table 3: Absolute Maximum ratings
Symbol VCES VECR VGE IC IC ICM ( ) PTOT VISO Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25C (#) Collector Current (continuous) at TC = 100C (#) Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Insulation withstand voltage AC (t=1sec, Tc=25C) Storage Temperature Operating Junction Temperature range Value 600 20 20 24 13 70 40 0.32 2500 -55 to 150 Unit V V V A A A W W/C V C
( ) Pulse width limited by safe operating area
Table 4: Thermal Data
Min. Rthj-case Rthj-amb TL Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) 300 Typ. Max. 3.15 62.5 C/W C/W C
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off
Symbol VBR(CES) ICES IGES VGE(th) VCE(sat) Parameter Collector-Emitter Breakdown Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions IC = 250 A, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20V , VCE = 0 VCE = VGE, IC = 250 A VGE = 15V, IC = 20 A, Tj= 25C VGE = 15V, IC = 20A, Tj=150C 2.5 1.25 1.2 Min. 600 10 100 100 5 1.7 Typ. Max. Unit V A A nA V V V
(#) Calculated according to the iterative formula: T -T JMAX C I ( T ) = ------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C C ESAT ( MAX ) C C
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ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic
Symbol gfs (1) Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-off SOA minimum current VCC = 480 V, IC = 20 A, VGE = 15 V (see Figure 19) Vclamp = 480 V , Tj = 125C RG = 100 80 Test Conditions VCE = 10 V , IC = 8 A VCE = 25 V, f= 1 MHz, VGE = 0 Min. Typ. 20 1820 167 27 83 10 27 115 Max. Unit S pF pF pF nC nC nC A
(1) Pulsed: Pulse duration= 300 s, duty cycle 1.5%
Table 7: Switching On
Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Delay Time Current Rise Time Turn-on Delay Time Test Conditions VCC = 480 V, IC = 20 A RG= 100 , VGE= 15V (see Figure 17) VCC = 480 V, IC = 20 A RG= 100 , VGE= 15V, Tj= 125C (see Figure 17) Min. Typ. 92 70 340 80 73 320 Max. Unit ns ns A/s ns ns A/s
Table 8: Switching Off
Symbol tc tr(Voff) td(off) tf tc tr(Voff) td(off) tf Parameter Cross-over Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Cross-over Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Vcc = 480 V, IC = 20 A, RG = 100 , VGE = 15 V Tj = 125 C (see Figure 17) Test Conditions Vcc = 480 V, IC = 20 A, RG = 100 , VGE = 15 V TJ = 25 C (see Figure 17) Min. Typ. 1.6 0.78 1.1 0.79 2.4 1.1 2.4 1.2 Max. Unit s s s s s s s s
Table 9: Switching Energy
Symbol Eon (2) Eoff (3) Ets Eon (2) Eoff (3) Ets Parameterr Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss Test Conditions VCC = 480 V, IC = 20 A RG= 100 , VGE= 15V, (see Figure 18) VCC = 480 V, IC = 20 A RG= 100 , VGE=15V,Tj=125C (see Figure 18) Min. Typ. 0.84 7.4 8.24 0.86 11.5 12.4 Max Unit mJ mJ mJ mJ mJ mJ
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. (3) Turn-off losses include also the tail of the collector current.
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Figure 3: Output Characteristics Figure 6: Transfer Characteristics
Figure 4: Transconductance
Figure 7: Normalized Collector-Emitter On Voltage vs Temperature
Figure 5: Collector-Emitter On Voltage vs Collector Current
Figure 8: Gate Threshold vs Temperature
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Figure 9: Normalized Breakdown Voltage vs Temperature Figure 12: Gate Charge vs Gate-Emitter Voltage
Figure 10: Capacitance Variations
Figure 13: Switching Losses vs Gate Charge
Figure 11: Switching Losses vs Temperature
Figure 14: Switching Losses vs Collector Current
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Figure 15: Thermal Impedance Figure 16: Collector-Emitter Diode Characteristics
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Figure 17: Test Circuit for Inductive Load Switching Figure 19: Gate Charge Test Circuit
Figure 18: Switching Waveforms
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In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
G
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Table 10: Revision History
Date 17-Dec-2004 05-Aug-2005 Revision 2 3 Description of Changes New template, no content change Some values changed in table 6
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
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